Faculty Details

• Sikkim Manipal Institute of Technology, Assistant Professor (SG) , Teaching and Research, April 2025 - till date.
• Sikkim Manipal Institute of Technology, Assistant Professor, Teaching and Research, 2014 to March 2024.
• Bhairab Ganguly College Kolkata-56, Lecturer, Teaching and Research, 2012 to 2014.
• Centre for Research in Nanoscience & Nanotechnology (CRNN), University of Calcutta, Project Fellow, Research, 2009 to 2012

AREAS OF INTEREST, EXPERTISE AND RESEARCH

• Area of Interest Nanotechnology, Thin Films, Optoelectronic and Photovoltaic Devices


• Area of Expertise Growth/Epitaxy of III-V-N and III-V-Bi Materials, Optoelectronic and Photovoltaic Devices, Physics and Technology of Nanoscale Electronic Devices


• Area of Research Growth/Epitaxy of III-V-N and III-V-Bi Materials, Optoelectronic and Photovoltaic Devices, Physics and Technology of Nanoscale Electronic Devices

• Dr. Sanat Kumar Das is Assistant Professor-I in the Department of Physics, SMIT. He teaches Physics to undergraduate and postgraduate students.

• Optical density of states in ultradilute GaAsN alloy: Coexistence of free excitons and impurity band

  2014 | Dr. Sanat Kumar Das | Sumi Bhuyan | Sanat Kr. Das | S. Dhar | Bipul Pal | Bhavtosh Bansal

  Optically active states in LPE-grown ultra-dilute GaAsN are studied in this paper. | Journal of Applied Physics 116, 023103

• Effect of band alignment in photoluminescence and carrier escape from InP surface quantum dots on Si grown by MOCVD

  2014 | Dr. Sanat Kumar Das | N. N. Halder | T. D. Das | Sanat Kr. Das | S. Chattopadhyay | D. Biswas | P. Banerji

  A detailed analysis of PL from InP QDs grown on Si. | Journal of Applied Physics 115, 043101

• Bi incorporation in GaSbBi films grown by liquid phase epitaxy

  2014 | Dr. Sanat Kumar Das | Sanat Kr. Das | T. D. Das | S. Dhar

  A detailed analysis of Bi incorporation properties of GaSbBi layers grown by LPE. | Environmental Science and Engineering, Springer International Publishing, pp. 847-848

• Effect of post growth anneal on the photoluminescence properties of GaSbBi

  2014 | Dr. Sanat Kumar Das | Sanat Kr. Das | T. D. Das | S. Dhar

  The effect of post-growth anneal on the PL properties of GaSbBi layers, grown by LPE, is investigated here. | Semicond. Sci. Technol. 29, 015003

• Electrical Properties of Vertically Oriented TiO2 Nanowire Arrays Synthesized by Glancing Angle Deposition Technique

  2013 | Dr. Sanat Kumar Das | A. Mondal | J. C. Dhar | P. Chinnamuthu | N. K. Singh | K.K. Chattopadhyay | Sanat Kr. Das | S. Ch Das | A. Bhattacharyya

  Investigation of the electrical properties of vertically oriented TiO2 NWs. | Electronic Materials Letters, Vol. 9, No. 2, pp. 213-217

• Use of Remote Sensing Data for exploring Potential Evapotranspiration over Gangtok

  February 25, 2019 | Dr. Sanat Kumar Das | Prava Adhikari | Dr. S. K Chakraborty | Dr. S. K Das

  Advanced Computational and Communication Paradigms (ICACCP2019)

• Computational Study of Adsorption behavior of CH4N2O and CH3OH on Fe decorated MoS2 monolayer

  January 01, 2021 | Dr. Sanat Kumar Das | Bibek Chettri | Abinash Thapa | Pronita Chettri | Bikash Sharma

  Solid State Electronics Letters, Elsevier, Volume 3, Pages 32-41. In this paper, we report the Fe doped MoS2 monolayer to improve the gas sensing properties. We investigated the electronic properties of Fe doped MoS2 for sensing Urea and Methanol using Density Functional Theory (DFT).

• First Principle Insight Into Co-Doped MoS2 For Sensing NH3 And CH4

  January 01, 2022 | Dr. Sanat Kumar Das | Bibek Chettri | Abinash Thapa | Pronita Chettri | Bikash Sharma

  Facta Universitatis, Series: Electronics and Energetics. Volume 35, Pages 43-59. In this work, we present the atomistic computational study of the adsorption properties of Co doped MoS2 adsorbed ammonia (NH3) and methane (CH4).